@unpublished{hu2023room,
author = {Hu, Haibo and Zhou, Yu and Yi, Ailun and Bao, Tongyuan and Liu，Chengying and Luo, Qi and Zhang, Yao and Wang, Zi and Liu, Zhengtong and Xiao, Shuming and Ou, Xin and Song, Qinghai},
title = {Room-Temperature entangled quantum processor on integrated semiconductor photonics platform},
note = {arXiv:2311.06541},
doi = {/2311.06541},
file = {hu2023room.pdf}
}
The rise of the 4H-silicon-carbide-on-insulator (SiCOI) platform marks a promising pathway towards the realization of monolithic quantum photonic networks. However, the challenge of establishing room-temperature entangled registers on these integrated photonics platforms remains unresolved. Herein, we demonstrate the first entangled processor on the SiCOI platform.We show that both deterministic generation of single divacancy electron spins and near-unity spin initialization of a single 13C nuclear spin can be achieved on SiCOI at room temperature. Besides coherently manipulating the single nuclear spin, a maximally entangled state with a fidelity of 0.89 has been prepared on this CMOS-compatible semiconductor-integrated photonics system. This work establishes the foundation for compact and on-chip solutions within existing defect-based computing and sensing protocols, positioning the SiCOI platform as the mostpromising candidate for integrated monolithic quantum photonic networks.
本研究探索了4H绝缘层碳化硅（SiCOI）平台在构建室温下可集成的量子光子网络方面的潜力。我们在SiCOI平台上构建了一个纠缠处理器，这是一个初步的尝试。研究表明，在室温条件下，该平台能够用于确定性生成单个双空位电子自旋，并实现对单个碳-13核自旋的初始化，初始化成功率接近100%。此外，研究还证明了在CMOS兼容的半导体集成光子系统中对单个核自旋进行相干操控的可行性。我们还制备了保真度为0.89的纠缠态。这一发现为基于量子缺陷的量子计算和传感器提供了一种可能的片上解决方案，并为SiCOI平台在量子光子学集成中的应用提供了实验依据。
@article{zhou2021rapid,
title = {Rapid and unconditional parametric reset protocol for tunable superconducting qubits},
author = {Zhou, Yu and Zhang, Zhenxing and Yin, Zelong and Huai, Sainan and Gu, Xiu and Xu, Xiong and Allcock, Jonathan and Liu, Fuming and Xi, Guanglei and Yu, Qiaonian and others},
journal = {Nature Communications},
volume = {12},
number = {1},
pages = {5924},
year = {2021},
doi = {/10.1038/s41467-021-26205-y},
file = {NC_reset.pdf}
}
Qubit initialization is a critical task in quantum computation and communication. Extensive efforts have been made to achieve this with high speed, efficiency and scalability. However, previous approaches have either been measurement based and required fast feedback, suffered from crosstalk or required sophisticated calibration. Here, we report a fast and high fidelity reset scheme, avoiding the issues above without any additional chip architecture. By modulating the flux through a transmon qubit, we realize a swap between the qubit and its readout resonator that suppresses the excited state population to 0.08% within 34 ns (284 ns if photon depletion of the resonator is required). Furthermore, our approach can achieve effective second excited state depletion,has negligible effects on neighboring qubits, and offers a way to entangle the qubit with an itinerant single photon, useful in quantum communication applications.
本研究聚焦于量子比特（qubit）的初始化问题，这是量子计算和通信中的核心技术挑战。传统方法往往依赖于基于测量的反馈过程，这在实施中可能会遇到如串扰和复杂校准等问题。为了解决这些问题，我们提出了一种新的快速且高保真的量子比特重置方案。该方案通过调制transmon量子比特的通量，实现了与读出谐振器之间的高效能量交换，从而在34纳秒内将激发态的布居数降低到0.08%±0.08%。我们的方法优势包括：有效地耗尽第二激发态、对相邻量子位的最小干扰，以及为量子比特与微波单光子之间的纠缠提供可能，这对于量子通信有重要的潜在应用。
Mu, Z., Zhou, Y., Chen, D., Fröch, J. E., Yang, J., Li, X., Aharonovich, I., & Gao, W.-B. (2020). Observation of Binary Spectral Jumps in Color Centers in Diamond. Advanced Optical Materials, 8(19), 2000495.
@article{mu2020observation,
title = {Observation of Binary Spectral Jumps in Color Centers in Diamond},
author = {Mu, Zhao and Zhou, Yu and Chen, Disheng and Fr{\"o}ch, Johannes E and Yang, Jianqun and Li, Xingji and Aharonovich, Igor and Gao, Wei-Bo},
journal = {Advanced Optical Materials},
volume = {8},
number = {19},
pages = {2000495},
year = {2020},
publisher = {Wiley Online Library},
file = {AOM.pdf},
doi = {/10.1002/adom.202000495}
}
Optical “blinking” normally refers to a switching behavior of fluorescence for quantum emissions between “ON” and “OFF” state. For quantum dots, single molecules, and nitrogen-vacancy centers in diamond, it usually stems from conversions between two different charge states, with one emitting strong and bright fluorescence while the other scattering weak or no fluorescence. Here, a different type of blinking from single emitters in ion implanted diamond is reported, with both blinking states exhibiting detectable photoluminescence under nonresonant excitation. Thanks to the low jumping rates, the dynamics of the emission can be directly monitored. The quadratic power dependence of the conversion rates suggests the possibility of two-photon ionization process in quantum jumps. This work provides extra insights into the photodynamics of the spectral jumps on defect-based single-photon emitters hosted in wide-bandgap semiconductors.
本研究报告了在非共振激发条件下，通过离子注入金刚石产生的单一发射体，展示了一种不寻常的光学“闪烁”行为。与常见的量子点和氮空位中心的闪烁不同，所观察到的这种闪烁现象是两种可检测光致发光状态间的转换，而不是从明亮到暗的状态。这种独特的闪烁动态可以由于较低的跳变率而被直接监测。实验中观察到的转换率的二次幂依赖性，提示了一个可能的双光子电离过程参与量子跃迁。此项研究增加了我们对宽带隙半导体中基于缺陷的单光子发射器光动力学跳变行为的理解。
Wang, J., Zhou, Y., Wang, Z., Rasmita, A., Yang, J., Li, X., von Bardeleben, H. J., & Gao, W. (2018). Bright room temperature single photon source at telecom range in cubic silicon carbide. Nature Communications, 9(1), 4106.
@article{wang2018bright,
title = {Bright room temperature single photon source at telecom range in cubic silicon carbide},
author = {Wang, Junfeng and Zhou, Yu and Wang, Ziyu and Rasmita, Abdullah and Yang, Jianqun and Li, Xingji and von Bardeleben, Hans J{\"u}rgen and Gao, Weibo},
journal = {Nature communications},
volume = {9},
number = {1},
pages = {4106},
year = {2018},
publisher = {Nature Publishing Group UK London},
file = {spesicnc.pdf},
doi = {/10.1038/s41467-018-06605-3}
}
Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of MHz. Altogether with the fact that SiC is a growth and fabrication-friendly material, our result may be relevant for future applications in quantum communication technology.
单光子发射器（SPE）在量子密钥分配等许多量子信息任务中发挥着重要作用。在这些协议中，由于电信波长光子在光纤中的传输损耗较低，因此是理想的选择。在本文中，我们研究了在通讯波段范围内发射的立方碳化硅（3C-SiC）中的明亮单光子发射器。我们发现这些发射器在室温下具有光稳定性和亮度，计数率为MHz量级。鉴于 SiC 是一种生长和制造友好（CMOS 工艺兼容）的材料，我们的结果可能与量子通信技术的未来应用相关。
Zhou, Y., Mu, Z., Adamo, G., Bauerdick, S., Rudzinski, A., Aharonovich, I., & Gao, W.-bo. (2018). Direct writing of single germanium vacancy center arrays in diamond. New Journal of Physics, 20(12), 125004.
@article{zhou2018direct,
title = {Direct writing of single germanium vacancy center arrays in diamond},
author = {Zhou, Yu and Mu, Zhao and Adamo, Giorgio and Bauerdick, Sven and Rudzinski, Axel and Aharonovich, Igor and Gao, Wei-bo},
journal = {New Journal of Physics},
volume = {20},
number = {12},
pages = {125004},
year = {2018},
publisher = {IOP Publishing},
file = {Zhou_2018_New_J._Phys._20_125004.pdf},
doi = {/10.1088/1367-2630/aaf2ac}
}
Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge+ ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions.
钻石中的色心是用于可扩展量子光子学应用的有前景的固态量子位。在众多缺陷中，具有反演对称性的缺陷因其具有前景的光学特性而备受关注。在这项工作中，我们展示了在金刚石中无掩模植入一系列明亮的单锗空位 (GeV) 中心。采用直接聚焦离子束技术，单 GeV 发射器的空间精度达到数十纳米。每个点200个Ge+离子的剂量下，单GeV产生率高达53%。所提出的制造方法有望用于未来以GeV发射器作为自旋相互作用的领先平台的集成光子结构的纳米制造。
Zhou, Y., Wang, Z., Rasmita, A., Kim, S., Berhane, A., Bodrog, Z., Adamo, G., Gali, A., Aharonovich, I., & Gao, W.-bo. (2018). Room temperature solid-state quantum emitters in the telecom range. Science Advances, 4(3), eaar3580.
@article{zhou2018room,
title = {Room temperature solid-state quantum emitters in the telecom range},
author = {Zhou, Yu and Wang, Ziyu and Rasmita, Abdullah and Kim, Sejeong and Berhane, Amanuel and Bodrog, Zolt{\'a}n and Adamo, Giorgio and Gali, Adam and Aharonovich, Igor and Gao, Wei-bo},
journal = {Science advances},
volume = {4},
number = {3},
pages = {eaar3580},
year = {2018},
publisher = {American Association for the Advancement of Science},
doi = {/10.1126/sciadv.aar358},
file = {Telecom Wavelength GaN.pdf}
}
On-demand, single-photon emitters (SPEs) play a key role across a broad range of quantum technologies. In quantum networks and quantum key distribution protocols, where photons are used as flying qubits, telecom wavelength operation is preferred because of the reduced fiber loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. We report a triggered, optically stable, room temperature solid-state SPE operating at telecom wavelengths. The emitters exhibit high photon purity ( 5% multiphoton events) and a record-high brightness of 1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.
本文报告了一种在室温条件下，于通讯波段操作的固态单光子发射器（SPE）。在量子网络和量子密钥分发中，飞行量子位的携带者——光子在通讯波段具有降低光纤损耗的优势，然而，实现在该波段下室温工作的单光子源仍是一个挑战。我们开发的SPE在光学稳定性方面展现出优异性能，其多光子事件率约为5%，并且亮度达到了1.5 MHz的创纪录水平。这一成果在氮化镓（GaN）晶体中实现，该材料与CMOS工艺兼容。我们的发现显示，氮化镓晶体内的高亮度通讯波段SPE有潜力作为集成量子器件的关键组成部分。该工作被Nature Nanotechnology 亮点报道，题目为“通讯波段量子光源被发现”。
Zhou, Y., Wang, J., Zhang, X., Li, K., Cai, J., & Gao, W. (2017). Self-protected thermometry with infrared photons and defect spins in silicon carbide. Physical Review Applied, 8(4), 044015.
@article{zhou2017self,
title = {Self-protected thermometry with infrared photons and defect spins in silicon carbide},
author = {Zhou, Yu and Wang, Junfeng and Zhang, Xiaoming and Li, Ke and Cai, Jianming and Gao, Weibo},
journal = {Physical Review Applied},
volume = {8},
number = {4},
pages = {044015},
year = {2017},
publisher = {APS},
file = {pr_applied_1.pdf},
doi = {/10.1103/PhysRevApplied.8.044015}
}
Quantum sensors with solid-state spins have attracted considerable interest due to their advantages in high sensitivity and high spatial resolution. The robustness against environmental noise is a critical requirement for solid-state spin sensors. In this paper, we present a self-protected infrared high-sensitivity thermometry based on spin defects in silicon carbide. Based on the conclusion that the Ramsey oscillations of the spin sensor are robust against magnetic noise due to a self-protected mechanism from the intrinsic transverse strain of the defect, we experimentally demonstrate the Ramsey-based thermometry. The self-protected infrared silicon-carbide thermometry may provide a promising platform for high sensitivity and high-spatial-resolution temperature sensing in a practical noisy environment, especially in biological systems and microelectronics systems.
本研究关注的是利用固态自旋的量子传感器在高灵敏度和高空间分辨率测量中的应用潜力。固态自旋传感器的设计关键在于其对环境噪声的鲁棒性。我们研发了一项新的测温技术，利用碳化硅中的自旋缺陷，展现了红外高灵敏度的传感能力。通过实验，我们证明了由于碳化硅固有横向应变的自我保护机制，使得基于拉姆齐振荡的自旋传感器对磁噪声具有内在的鲁棒性。这一自保护测温技术在生物系统和微电子系统的实际噪声环境中，为高精度和高分辨率的温度传感提供了一个有潜力的新平台。
Zhou, Y., Rasmita, A., Li, K., Xiong, Q., Aharonovich, I., & Gao, W.-bo. (2017). Coherent control of a strongly driven silicon vacancy optical transition in diamond. Nature Communications, 8(1), 14451.
@article{zhou2017coherent,
title = {Coherent control of a strongly driven silicon vacancy optical transition in diamond},
author = {Zhou, Yu and Rasmita, Abdullah and Li, Ke and Xiong, Qihua and Aharonovich, Igor and Gao, Wei-bo},
journal = {Nature communications},
volume = {8},
number = {1},
pages = {14451},
year = {2017},
publisher = {Nature Publishing Group UK London},
file = {Telecom Wavelength GaN.pdf},
doi = {/10.1038/ncomms14451}
}
The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid-state emitters have emerged as promising candidates with their prospects for on-chip integration as quantum nodes and sources of coherent photons connecting these nodes. Under a strongly driving resonant laser field, such quantum emitters can exhibit quantum behaviour such as Autler–Townes splitting and the Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy centre in diamond. Rapid optical detection of photons enabled the observation of time-resolved coherent Rabi oscillations and the Mollow triplet spectrum. Detection with a probing transition further confirmed Autler–Townes splitting generated by a strong laser field. The coherence time of the emitted photons is comparable to its lifetime and robust under a very strong driving field, which is promising for the generation of indistinguishable photons.
准备、光学读出和相干控制单量子态的能力是量子信息处理的关键要求。 存在于固体中的量子缺陷色心已成为有前途的候选者，其有望作为量子节点和连接这些节点的相干光子源进行片上集成。在强驱动谐振激光场下，此类量子发射器可以表现出量子行为，例如 Autler–Townes splitting 和 Mollow triplet三重态谱。在这里，我们展示了对金刚石硅空位中心强驱动光学跃迁的相干控制。光子的快速光学检测使得能够观察时间分辨相干拉比振荡和Mollow三重态光谱。探测跃迁的检测进一步证实了强激光场产生的Autler–Townes splitting。发射光子的相干时间与其寿命相当，并且在非常强的驱动场下具有鲁棒性，有望用来产生不可区分的光子。
